SOI wafers are a promising new basic material for the microelectronics industry to produce faster and higher-performance microelectronic devices. Wafer bonding, as one key enabling technology for the SOI wafer fabrication process, achieves high-quality single-crystal silicon films on insulating substrates. With the EVG850 SOI production bonding system, all essential steps for SOI bonding – from cleaning to pre-bonding and IR-inspection – are combined. Thus, the EVG850 assures a high-yield production process for void-free SOI wafers. Being the only production system built to operate in high-throughput, high-yield environments, the EVG850 has been established as the industry standard in the SOI wafer market.
| Wafer diameter (substrate size) |
|---|
| 100 – 200, 150 – 300 mm |
| Fully-automated cassette-to-cassette operation |
| Pre-bonding chamber |
|---|
| Alignment type: flat-to-flat or notch-to-notch |
| Alignment accuracy: X and Y: ± 50 µm, Theta: ± 0.1 ° |
| Bond force: up to 5 N |
| Bond wave initiation position: flexible from wafer edge to center |
| Vacuum system: 9×10-2 mbar (standard) and 9×10-3 mbar (option with turbo pump) |
| Cleaning station |
|---|
| Cleaning Method: rinse (standard), megasonic nozzle, megasonic area transducer, jet nozzle, brush (optional) |
| Chamber: made of PP or PFA (option) |
| Cleaning media: DI-water (standard), NH4OH and H2O2 with max. 2 % concentration (option) |
| Spinner chuck: vacuum chuck (standard) and edge handling chuck (option) made of metal ion free and clean materials |
| Rotation: up to 3000 rpm (in 5 s) |
| Cleaning arm: for up to 5 media lines (1 megasonic system uses 2 lines) |
| Optional features |
|---|
| ISO 3 mini-environment (according to ISO 14644) |
| LowTemp™ plasma activation chamber |
| IR-inspection station |
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